View MRFG35002N6T108_4241835.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
MRFG35002N6T1 replaced by MRFG35002N6AT1.
Document Number: MRFG35002N6 Rev. 2, 1/2008
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. * Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 10 dB Drain Efficiency -- 27% ACPR @ 5 MHz Offset -- - 41 dBc in 3.84 MHz Channel Bandwidth * 1.5 Watts P1dB @ 3550 MHz, CW * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * RoHS Compliant. * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35002N6T1
3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature
(1)
Symbol VDSS VGS Pin Tstg Tch TC
Value 8 -5 22 - 65 to +150 175 - 20 to +85
Unit Vdc Vdc dBm C C C
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (2) 15.2 Unit C/W
Table 3. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRFG35002N6T1 1
RF Device Data Freescale Semiconductor
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
LIFETIME BUY
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 6 Vdc, VGS = - 2.5 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 8.7 mA) Quiescent Gate Voltage (VDS = 6 Vdc, ID = 65 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Min -- -- -- -- - 1.2 - 1.1 Typ 1.7 < 1.0 -- < 1.0 - 0.9 - 0.8 Max -- 100 600 9 - 0.7 - 0.6 Unit Adc Adc Adc mAdc Vdc Vdc
LIFETIME BUY
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, Pout = 158.5 mW Avg., f = 3550 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Gps hD ACPR 8.5 23 -- 10 27 - 41 -- -- - 38 dB % dBc
Typical RF Performance (In Freescale Test Fixture, 50 hm system) VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Output Power, 1 dB Compression Point, CW P1dB -- 1.5 -- W
MRFG35002N6T1 2 RF Device Data Freescale Semiconductor
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
VBIAS C8 C13 C12 C11 C10 C9 C7 R1 C19 C20 C6 RF INPUT Z1 C1 C3 C4 C23 Z2 Z3 Z4 Z5 C5 C22 Z6 Z7 Z8 Z9 Z10 C21 Z11 Z12 Z13 C24 Z14 C18 C17 C16 C15 C14
VSUPPLY
RF OUTPUT
Z1, Z14 Z2 Z3 Z4 Z5 Z6, Z11 Z7
0.044 0.044 0.044 0.468 0.468 0.015 0.031
x 0.125 Microstrip x 0.500 Microstrip x 0.052 Microstrip x 0.010 Microstrip x 0.356 Microstrip x 0.549 Microstrip x 0.259 Microstrip
Z8 Z9 Z10 Z12 Z13 PCB
0.420 x 0.150 Microstrip 0.150 x 0.068 Microstrip 0.290 x 0.183 Microstrip 0.044 x 0.115 Microstrip 0.044 x 0.894 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 1. MRFG35002N6 Test Circuit Schematic
Table 5. MRFG35002N6 Test Circuit Component Designations and Values
Part C1, C24 C2 C3 C4 C5, C6, C21, C22 C7, C20 C8, C19 C9, C18 C10, C17 C11, C16 C12, C15 C13, C14 C23 R1 Not Used 1.2 pF Chip Capacitor 0.7 pF Chip Capacitor 5.6 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 F Chip Capacitors 39K pF Chip Capacitors 10 F Chip Capacitors 0.2 pF Chip Capacitor 100 , 1/4 W Chip Resistor 08051J1R2BBT 08051J0R7BBT 08051J6R8BBT 100A100JP150X 100A101JP150X 100B101JP500X 100B102JP50X CDR33BX104AKWS 200B393KP50X GRM55DR61H106KA88B 08051J0R2BBT AVX AVX AVX ATC ATC ATC ATC Kemet ATC Kemet AVX Description 13 pF Chip Capacitors Part Number 100A130JP150X Manufacturer ATC
MRFG35002N6T1 RF Device Data Freescale Semiconductor 3
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
LIFETIME BUY
C13
C12
C11
C10
C9 C8 C7
C18
C17
C16
C15
C14
R1 C5 C6 C19 C20
C22
C21
LIFETIME BUY
C2
C1 C3 C4 C23 C24
MRFG35002M6, Rev. 2 3.5 GHz - 3.6 GHz
Figure 2. MRFG35002N6 Test Circuit Component Layout
MRFG35002N6T1 4 RF Device Data Freescale Semiconductor
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
TYPICAL CHARACTERISTICS
14 GT, TRANSDUCER GAIN (dB) 12 VDS = 6 Vdc, IDQ = 75 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth S = 0.813e-115.4_, L = 0.748e-147.8_ GT 50
10
30
8
20
6 D 4 0 5 10 15 20 25 Pout, OUTPUT POWER (dBm)
10
0 30
LIFETIME BUY
Figure 3. Transducer Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -20 VDS = 6 Vdc, IDQ = 75 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth S = 0.813e-115.4_, L = 0.748e-147.8_ 0 IRL, INPUT RETURN LOSS (dB)
-30
-5
-40
IRL
-10
-50 ACPR -60 0 6 12 18 24 Pout, OUTPUT POWER (dBm)
-15
-20 30
Figure 4. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power
NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown.
D, DRAIN EFFICIENCY (%)
40
MRFG35002N6T1 RF Device Data Freescale Semiconductor 5
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
TYPICAL CHARACTERISTICS
14 VDS = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 50
10
Gps
30
8
20
6 D 4 0 6 12 18 24 Pout, OUTPUT POWER (dBm)
10
0 30
LIFETIME BUY
Figure 5. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -20 VDS = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) -30 IRL -40 -15 -10 -5 IRL, INPUT RETURN LOSS (dB)
-50 ACPR -60 0 6 12 18 24 Pout, OUTPUT POWER (dBm)
-20
-25 30
Figure 6. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power
NOTE: Data is generated from the test circuit shown.
MRFG35002N6T1 6 RF Device Data Freescale Semiconductor
D, DRAIN EFFICIENCY (%)
12 Gps, POWER GAIN (dB)
40
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA
f GHz 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 S11 |S11| 0.906 0.906 0.906 0.906 0.908 0.907 0.907 0.907 0.908 0.908 0.907 0.908 0.909 0.909 0.907 0.907 0.907 0.911 0.904 0.906 0.905 0.907 0.908 0.908 0.908 0.907 0.907 0.907 0.907 0.907 0.906 0.905 0.904 0.905 0.903 0.902 0.901 0.901 0.900 0.899 0.899 0.897 0.896 0.895 0.894 0.893 - 173.61 - 175.37 - 176.93 - 178.40 - 179.79 179.01 177.87 176.78 175.82 174.92 174.04 173.19 172.44 171.49 170.67 169.76 168.81 167.94 167.04 165.86 164.68 162.72 161.85 160.93 160.05 159.11 158.22 157.41 156.52 155.57 154.82 153.97 153.06 152.15 151.26 150.30 149.48 148.64 147.66 146.68 145.77 144.90 143.88 143.15 142.07 141.15 |S21| 6.43 5.86 5.38 4.98 4.65 4.34 4.08 3.85 3.65 3.46 3.30 3.15 3.02 2.90 2.79 2.68 2.59 2.50 2.43 2.36 2.30 2.18 2.11 2.06 2.00 1.95 1.90 1.86 1.82 1.78 1.74 1.71 1.67 1.65 1.62 1.59 1.57 1.55 1.53 1.52 1.50 1.49 1.47 1.46 1.45 1.43 S21 84.54 82.68 80.94 79.21 77.51 75.94 74.33 72.72 71.14 69.56 68.00 66.45 64.84 63.23 61.71 60.14 58.62 57.03 55.47 53.91 52.30 51.28 49.87 48.41 46.98 45.59 44.16 42.77 41.41 39.95 38.64 37.30 35.97 34.63 33.28 31.95 30.67 29.34 28.02 26.72 25.40 24.06 22.69 21.34 19.94 18.49 |S12| 0.0316 0.0319 0.0320 0.0317 0.0320 0.0320 0.0321 0.0323 0.0324 0.0322 0.0322 0.0324 0.0325 0.0327 0.0327 0.0328 0.0328 0.0330 0.0334 0.0334 0.0333 0.0325 0.0327 0.0328 0.0328 0.0330 0.0330 0.0330 0.0332 0.0332 0.0335 0.0336 0.0339 0.0339 0.0340 0.0341 0.0344 0.0345 0.0348 0.0351 0.0353 0.0356 0.0361 0.0365 0.0370 0.0375 S12 1.5 0.8 - 0.6 - 1.7 - 2.8 - 3.3 - 4.3 - 5.5 - 6.3 - 6.7 - 7.7 - 8.9 - 9.2 - 10.6 - 11.6 - 12.0 - 13.3 - 14.1 - 14.8 - 16.2 - 16.9 - 17.3 - 17.9 - 18.7 - 19.8 - 20.1 - 20.6 - 21.2 - 22.4 - 22.9 - 23.8 - 24.5 - 25.1 - 26.0 - 26.8 - 27.4 - 28.0 - 28.5 - 29.1 - 29.6 - 30.6 - 31.2 - 31.7 - 32.5 - 33.3 - 34.0 |S22| 0.713 0.714 0.714 0.713 0.713 0.712 0.713 0.713 0.713 0.712 0.711 0.712 0.711 0.711 0.711 0.709 0.709 0.713 0.706 0.707 0.707 0.712 0.712 0.713 0.713 0.712 0.713 0.714 0.713 0.713 0.713 0.712 0.712 0.712 0.711 0.709 0.709 0.707 0.705 0.703 0.703 0.699 0.697 0.695 0.692 0.689 S22 - 175.9 - 177.3 - 178.6 - 179.9 178.9 177.6 176.4 175.1 173.7 172.4 171.1 169.7 168.2 167.0 165.7 164.5 163.5 162.3 161.1 160.1 161.0 160.0 159.1 158.1 157.3 156.4 155.6 154.8 154.0 153.4 152.7 152.1 151.5 150.9 150.3 149.7 149.2 148.6 148.0 147.3 146.8 146.2 145.6 144.9 144.2 - 174.6
MRFG35002N6T1 RF Device Data Freescale Semiconductor 7
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
LIFETIME BUY
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA (continued)
f GHz 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 5.05 S11 |S11| 0.890 0.889 0.888 0.887 0.885 0.884 0.883 0.881 0.880 0.879 0.878 0.876 0.876 0.874 0.872 0.871 0.871 0.867 0.867 0.865 0.864 0.863 0.861 0.859 0.859 0.858 0.855 0.854 0.852 0.850 0.851 0.848 0.847 0.846 0.845 0.843 0.840 0.839 0.837 0.835 0.834 0.832 0.831 0.831 0.829 0.826 140.26 139.29 138.19 137.20 136.18 135.00 133.98 132.89 131.67 130.56 129.47 128.25 127.01 125.80 124.44 123.10 121.58 120.32 118.80 117.37 115.86 114.26 112.73 111.11 109.30 107.69 106.01 104.09 102.36 100.53 98.59 96.65 94.71 92.56 90.47 88.43 86.15 83.96 81.79 79.39 77.08 74.81 72.32 69.82 67.43 64.82 |S21| 1.42 1.42 1.41 1.40 1.40 1.39 1.38 1.38 1.37 1.37 1.36 1.36 1.35 1.35 1.35 1.34 1.34 1.33 1.33 1.33 1.32 1.32 1.31 1.31 1.31 1.30 1.30 1.30 1.30 1.29 1.29 1.29 1.29 1.29 1.29 1.29 1.29 1.29 1.29 1.30 1.30 1.30 1.30 1.31 1.31 1.31 S21 17.14 15.69 14.28 12.80 11.33 9.81 8.29 6.77 5.14 3.56 1.92 0.22 - 1.44 - 3.12 - 4.89 - 6.62 - 8.32 - 10.12 - 11.94 - 13.68 - 15.54 - 17.42 - 19.27 - 21.16 - 23.12 - 25.03 - 26.95 - 28.98 - 30.89 - 32.85 - 34.85 - 36.86 - 38.87 - 40.97 - 43.11 - 45.16 - 47.39 - 49.59 - 51.81 - 54.06 - 56.36 - 58.58 - 60.91 - 63.36 - 65.78 - 68.28 |S12| 0.0381 0.0385 0.0386 0.0388 0.0392 0.0394 0.0398 0.0402 0.0407 0.0412 0.0415 0.0419 0.0422 0.0428 0.0431 0.0438 0.0442 0.0449 0.0455 0.0458 0.0458 0.0460 0.0464 0.0469 0.0472 0.0476 0.0482 0.0488 0.0491 0.0498 0.0500 0.0504 0.0509 0.0515 0.0519 0.0526 0.0531 0.0537 0.0541 0.0546 0.0550 0.0554 0.0560 0.0565 0.0571 0.0578 S12 - 35.1 - 36.3 - 37.0 - 38.3 - 38.9 - 39.6 - 40.5 - 41.3 - 42.2 - 42.9 - 44.0 - 45.1 - 46.2 - 47.2 - 48.0 - 49.1 - 50.2 - 51.3 - 53.0 - 54.1 - 55.7 - 56.6 - 58.1 - 59.2 - 60.4 - 61.5 - 62.6 - 64.0 - 65.7 - 67.1 - 68.5 - 70.2 - 71.6 - 73.3 - 74.6 - 76.2 - 77.8 - 79.6 - 81.3 - 83.0 - 85.0 - 86.6 - 88.1 - 90.0 - 91.8 - 93.5 |S22| 0.687 0.684 0.682 0.678 0.676 0.671 0.668 0.665 0.662 0.658 0.656 0.651 0.648 0.646 0.642 0.638 0.637 0.633 0.629 0.626 0.624 0.620 0.617 0.615 0.611 0.608 0.605 0.602 0.599 0.596 0.593 0.589 0.586 0.583 0.580 0.576 0.572 0.568 0.564 0.559 0.556 0.550 0.546 0.542 0.537 0.532 S22 142.8 142.0 141.2 140.3 139.4 138.4 137.3 136.2 135.1 133.9 132.8 131.5 130.2 129.0 127.5 126.0 124.9 123.5 122.0 120.5 119.1 117.6 116.1 114.7 113.2 111.8 110.3 108.8 107.4 106.0 104.4 102.9 101.4 99.8 98.2 96.5 94.8 93.0 91.2 89.4 87.6 85.5 83.6 81.5 79.2 143.5
MRFG35002N6T1 8 RF Device Data Freescale Semiconductor
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
LIFETIME BUY
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA (continued)
f GHz 5.10 5.15 5.20 5.25 5.30 5.35 5.40 5.45 S11 |S11| 0.826 0.824 0.821 0.819 0.818 0.815 0.814 0.812 62.21 59.75 57.08 54.50 51.91 49.24 46.40 43.69 |S21| 1.31 1.31 1.31 1.31 1.32 1.32 1.32 1.32 S21 - 70.79 - 73.33 - 75.85 - 78.30 - 80.93 - 83.65 - 86.36 - 89.16 |S12| 0.0583 0.0592 0.0596 0.0605 0.0610 0.0617 0.0626 0.0629 S12 - 95.6 - 97.5 - 99.5 - 101.5 - 103.7 - 105.8 - 108.2 - 110.5 |S22| 0.528 0.524 0.519 0.516 0.512 0.510 0.506 0.501 S22 74.7 72.3 70.0 67.4 64.6 61.9 59.0 77.0
MRFG35002N6T1 RF Device Data Freescale Semiconductor 9
LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08
LIFETIME BUY
PACKAGE DIMENSIONS
A F
3
0.146 3.71
0.095 2.41
0.115 2.92
B
D
1
2
R
L
0.115 2.92 0.020 0.51
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _ 10_DRAFT
inches mm
SOLDER FOOTPRINT
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
U H
4
P C
Y
Y
E
ZONE W
1
G
MRFG35002N6T1 10 RF Device Data Freescale Semiconductor
EEEEEE EE EEEE E EEEEEE EE EEEEEE EEEE E EEEEEE EE
2 3
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE
S
ZONE X
VIEW Y - Y
CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 2 Date Jan. 2008 * Listed replacement part, p. 1 * Added Product Documentation and Revision History, p. 11 Description
MRFG35002N6T1 RF Device Data Freescale Semiconductor 11
How to Reach Us:
Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006, 2008. All rights reserved.
MRFG35002N6T1
Rev. 12 2, 1/2008 Document Number: MRFG35002N6
RF Device Data Freescale Semiconductor

▲Up To Search▲

Price & Availability of MRFG35002N6T108

	To Download MRFG35002N6T108 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .